Session Overview

The semiconductor industry is undergoing rapid advancements, with new technologies pushing the boundaries of what is possible. However, these advancements also bring about new challenges, particularly in the realm of Electrostatic Discharge (ESD) protection. As semiconductor devices become smaller, faster, and more integrated, the need for robust ESD solutions becomes more critical. This panel session will bring together leading experts from academia and industry to discuss and debate the emerging ESD challenges associated with next-generation semiconductor technologies.

Panellists & Topics

Dr. Harald Gossner (Senior Principal Engineer, Intel Corporation, Germany)

Topic:
Discussion on the evolution of CMOS nodes over the next 15 years, focusing on advanced and 3D packaging, heterogeneous integration, backside power rails, and the impact of newer materials like 2D materials on ESD design and protection.

Dr. Steffen Holland (Technical Director, Nexperia Germany GmbH)

Topic:
Exploration of ESD challenges in advanced automotive nodes, system-level ESD issues in electric vehicles (EVs), and the specific requirements of advanced automotive and EV applications.

Dr. Ann Concannon (DMTS, Texas Instruments)

Topic:
Examination of the growing complexity of ESD issues and the role of advanced computational and simulation techniques in addressing these challenges. Emphasis on the need for more sophisticated simulation approaches as semiconductor technologies continue to evolve.

Dr. Akram A Salman (VP/Master Samsung Fondary (ESD team leader) Samsung Electronics , South Korea)

Topic:
Insight into the unique ESD challenges posed by next generation and futuristic technologies. Discussion on the critical role that academia plays in addressing scientifically challenging problems that are beyond the current capabilities of industry, and the importance of industry-academia collaborations.

Session Format

• Opening Statements (30 minutes): Each panellist will present their thoughts on the designated topics, providing insights into the current state of ESD challenges and future directions. (7 minutes per panellist with a 30-second buffer for transitions).
• Panel Debate & Discussion (10 minutes): Panellists will engage in a debate, discussing and potentially challenging or supporting each other's views on the topics presented.
• Audience Q&A (20 minutes): The session will conclude with an interactive Q&A segment, allowing the audience to pose questions to the panellists and participate in the discussion.

Expected Outcomes

• Provide a comprehensive overview of the current and future ESD challenges in advanced semiconductor technologies.
• Facilitate a deep discussion on the role of emerging technologies in shaping ESD protection strategies.
• Encourage collaboration between industry and academia to address these challenges effectively.